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Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB

Crucial Technology CT51264AC800.C16FC 4GB vs G Skill Intl F4-3300C16-16GTZKW 16GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

差异 规格 评论

差异

Crucial Technology CT51264AC800.C16FC 4GB 需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,378.6 left arrow 11.9
    测试中的平均数值
G Skill Intl F4-3300C16-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3300C16-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 62
    左右 -158% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 24
  • 读取速度，GB/s
    4,670.6 left arrow 16.1
  • 写入速度，GB/s
    2,378.6 left arrow 11.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    861 left arrow 3305

Crucial Technology CT51264AC800.C16FC 4GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB

G Skill Intl F4-3300C16-16GTZKW 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
Corsair CMSX16GX3M2B1600C9 8GB
Corsair CMSX16GX3M2B1600C9 8GB
Kingston KMKYF9-MIB 8GB
Kingston KMKYF9-MIB 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
G Skill Intl F4-3300C16-16GTZKW 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK16GX4M2B3733C17 8GB
Corsair CMK16GX4M2B3733C17 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C19-16GSXWB 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
内存RAM
Patriot Memory (PDP Systems) 160C0 V3 Series 8GB
Patriot Memory (PDP Systems) 160C0 V3 Series 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM