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Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4000C14-8GTZR 8GB

Crucial Technology CT51264AC800.C16FC 4GB vs G Skill Intl F4-4000C14-8GTZR 8GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

差异 规格 评论

差异

Crucial Technology CT51264AC800.C16FC 4GB 需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 24.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,378.6 left arrow 19.9
    测试中的平均数值
G Skill Intl F4-4000C14-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4000C14-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 62
    左右 -130% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 27
  • 读取速度，GB/s
    4,670.6 left arrow 24.7
  • 写入速度，GB/s
    2,378.6 left arrow 19.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    861 left arrow 4174

Crucial Technology CT51264AC800.C16FC 4GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB

G Skill Intl F4-4000C14-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9905678-042.A00G 8GB
Kingston 9905678-042.A00G 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Crucial Technology BL16G26C16U4W.16FD 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
内存RAM
Samsung M3 78T5663FB3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965698-001.A00G 16GB
Kingston 9965698-001.A00G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M2K4133C19 8GB
Corsair CMK16GX4M2K4133C19 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 99U5643-001.A00G 8GB
Kingston 99U5643-001.A00G 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Corsair CMG32GX4M2D3600C18 16GB
Corsair CMG32GX4M2D3600C18 16GB
内存RAM