Crucial Technology CT51264AC800.C16FC 4GB vs Micron Technology 36ADS2G72PZ-2G1A1 16GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

低于PassMark测试中的延时，ns

62 94

左右 34% 更低的延时

Micron Technology 36ADS2G72PZ-2G1A1 16GB

需要考虑的原因
Micron Technology 36ADS2G72PZ-2G1A1 16GB

报告一个错误

更快的读取速度，GB/s

5.6 4

测试中的平均数值
更快的写入速度，GB/s

4.9 2,378.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 94
读取速度，GB/s

4,670.6 5.6
写入速度，GB/s

2,378.6 4.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

861 1334

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Kingston 9905471-076.A00LF 8GB

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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston MSI32D4S2S1ME-8 8GB

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Corsair CMT16GX4M2C3000C15 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMD8GX3M2A2933C12 4GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

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Kingston 9905403-515.A00LF 8GB

Kingston 9965600-033.A00G 16GB

Kingston 9965600-033.A00G 16GB