Crucial Technology CT51264AC800.C16FC 4GB vs Samsung M393A2K40BB0-CPB 16GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

Samsung M393A2K40BB0-CPB 16GB

需要考虑的原因
Samsung M393A2K40BB0-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

54 62

左右 -15% 更低的延时
更快的读取速度，GB/s

5.3 4

测试中的平均数值
更快的写入速度，GB/s

4.2 2,378.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Samsung M393A2K40BB0-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 54
读取速度，GB/s

4,670.6 5.3
写入速度，GB/s

2,378.6 4.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

861 1277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3000C15-8GRR 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 9905744-067.A00G 32GB

Kingston 9905744-067.A00G 32GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

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G Skill Intl F4-2400C17-8GFT 8GB

Crucial Technology CT51264BD1339.M16F 4GB

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Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

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Samsung M471A5143SB1-CRC 4GB

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