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Crucial Technology CT51264AC800.C16FC 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
比较
Crucial Technology CT51264AC800.C16FC 4GB vs Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
总分
Crucial Technology CT51264AC800.C16FC 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
更快的读取速度,GB/s
4
17.1
测试中的平均数值
更快的写入速度,GB/s
2,378.6
15.3
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
62
左右 -121% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
28
读取速度,GB/s
4,670.6
17.1
写入速度,GB/s
2,378.6
15.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
861
3480
Crucial Technology CT51264AC800.C16FC 4GB RAM的比较
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F5-5600J4040C16G 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 9905712-008.A00G 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3200C16-32GTZN 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M393A1G40EB1-CPB 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
SK Hynix DDR2 800 2G 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
报告一个错误
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Bug description
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