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Crucial Technology CT51264AC800.C16FC 4GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
比较
Crucial Technology CT51264AC800.C16FC 4GB vs Wilk Elektronik S.A. GY2400D464L15/8G 8GB
总分
Crucial Technology CT51264AC800.C16FC 4GB
总分
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
更快的读取速度,GB/s
4
17.5
测试中的平均数值
更快的写入速度,GB/s
2,378.6
12.5
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
62
左右 -130% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
27
读取速度,GB/s
4,670.6
17.5
写入速度,GB/s
2,378.6
12.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
861
3223
Crucial Technology CT51264AC800.C16FC 4GB RAM的比较
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMW16GX4M1Z3600C18 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT64GX4M4C3000C15 16GB
Kingston 9965525-155.A00LF 8GB
Smart Modular SF464128CKHIWDFSEG 4GB
报告一个错误
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