Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Crucial Technology CT51264BA1339.C16F 4GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

报告一个错误

更快的读取速度，GB/s

15.7 13.9

测试中的平均数值
更快的写入速度，GB/s

11.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

13.9 15.7
写入速度，GB/s

8.4 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2666C12-8GTXD 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-2666C15-4GRR 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

A-DATA Technology DDR3 1600 4GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB