Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CMK16GX4M4B3866C18 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CMK16GX4M4B3866C18 4GB

Corsair CMK16GX4M4B3866C18 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Corsair CMK16GX4M4B3866C18 4GB

需要考虑的原因
Corsair CMK16GX4M4B3866C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

19.1 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK16GX4M4B3866C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

13.9 19.1
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2133C11D3/4GX 4GB

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G Skill Intl F4-3600C18-8GTZN 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Crucial Technology BLS4G4D26BFSE.8FBD2 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-2666C19-8GSXK 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston KVR800D2N6/2G 2GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

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Corsair CMK16GX4M2Z4000C18 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston XW21KG-MIE2 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Gold Key Technology Co Ltd NMUD416E82-4400G 16GB