Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BL16G32C16S4B.M16FE 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Crucial Technology BL16G32C16S4B.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

17.9 13.9

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.9 17.9
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 3385

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A2K43CB1-CRC 16GB

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Crucial Technology CT8G4DFRA32A.M4FF 8GB

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Apacer Technology D12.2755BS.001 16GB

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A-DATA Technology DDR4 2666 8GB

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Smart Modular SF4641G8CK8I8HLSBG 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

Corsair CMW64GX4M4C3000C15 16GB

Corsair CMW64GX4M4C3000C15 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

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Kingston 9905458-017.A01LF 4GB

Kingston 9965640-008.A01G 32GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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