Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BL16G36C16U4WL.M16FE 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Crucial Technology BL16G36C16U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4WL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

19.8 13.9

测试中的平均数值
更快的写入速度，GB/s

16.8 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.9 19.8
写入速度，GB/s

8.4 16.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 4012

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3300C16-8GTZKW 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

SK Hynix HMA42GR7AFR4N-TF 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMK4GX4M1A2400C14 4GB

Corsair CMK4GX4M1A2400C14 4GB

Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-4000C19-4GTZ 4GB

G Skill Intl F4-4000C19-4GTZ 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB