Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology BLS16G4D240FSB.16FBD 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Crucial Technology BLS16G4D240FSB.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FBD 16GB

报告一个错误

更快的读取速度，GB/s

15.9 13.9

测试中的平均数值
更快的写入速度，GB/s

9.8 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 15.9
写入速度，GB/s

8.4 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 2881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Apacer Technology 78.CAGN4.4020B 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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G Skill Intl F4-3200C16-8GSXWB 8GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

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Kingston 9905702-010.A00G 8GB

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A-DATA Technology DDR4 2400 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB