Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology CT16G4DFD8213.M16FB 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时
更快的写入速度，GB/s

8.4 8.0

测试中的平均数值

Crucial Technology CT16G4DFD8213.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.M16FB 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 13.9
写入速度，GB/s

8.4 8.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2236

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMW8GX4M1Z3200C16 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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AMD R5S38G1601U2S 8GB

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Avant Technology W6451U67J7240NB 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Team Group Inc. TEAMGROUP-Ind-2666 8GB

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AMD R538G1601U2S-UO 8GB

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Essencore Limited KD4AGU880-36A180C 16GB

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905469-143.A00LF 4GB

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Qimonda 64T128020EDL2.5C2 1GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB