Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology CT4G4DFS824A.M8FB 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Crucial Technology CT4G4DFS824A.M8FB 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

17 13.9

测试中的平均数值
更快的写入速度，GB/s

12.2 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.9 17.0
写入速度，GB/s

8.4 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 2646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston KF2933C17S4/16G 16GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

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Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

SK Hynix HMT351S6CFR8C-H9 4GB

SK Hynix HMT351S6CFR8C-H9 4GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

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AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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Heoriady M378A1K43BB2-CTD 8GB