Crucial Technology CT51264BA1339.C16F 4GB vs Crucial Technology CT8G4SFS8213.M8FB 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Crucial Technology CT8G4SFS8213.M8FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.M8FB 8GB

报告一个错误

更快的读取速度，GB/s

14 13.9

测试中的平均数值
更快的写入速度，GB/s

10.4 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.9 14.0
写入速度，GB/s

8.4 10.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2616

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M386B4G70DM0-CMA4 32GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

A-DATA Technology AD73I1B1672EG 2GB

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Apacer Technology GD2.1527CS.001 8GB

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Samsung M471A2K43BB1-CPB 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK32GX4M4E4133C19 8GB

Corsair CMK32GX4M4E4133C19 8GB