Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3000C15-8GVKB 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

G Skill Intl F4-3000C15-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVKB 8GB

报告一个错误

更快的读取速度，GB/s

18.3 13.9

测试中的平均数值
更快的写入速度，GB/s

14.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.9 18.3
写入速度，GB/s

8.4 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5173BH0-CH9 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMK8GX4M2C3000C16 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

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Samsung M471A1K43EB1-CWE 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D240FSB.16FARG 8GB

Crucial Technology BLS8G4D240FSB.16FARG 8GB