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Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-16GVR 16GB

Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3200C14-16GVR 16GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
G Skill Intl F4-3200C14-16GVR 16GB

G Skill Intl F4-3200C14-16GVR 16GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
G Skill Intl F4-3200C14-16GVR 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GVR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-16GVR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 25
  • 读取速度，GB/s
    13.9 left arrow 19.4
  • 写入速度，GB/s
    8.4 left arrow 16.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3912

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

G Skill Intl F4-3200C14-16GVR 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Ramaxel Technology RMR5030ME68F9F1600 4GB
EXCELERAM EKBLACK4163016AD 8GB
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内存RAM
Kingston 9905403-134.A00LF 2GB
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
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G Skill Intl F4-3200C16-16GFX 16GB
G Skill Intl F4-3200C16-16GFX 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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Corsair CMK16GX4M2E4000C19 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
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Corsair CMK32GX4M4B3600C18 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM