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Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3866C18-8GTZKW 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-3866C18-8GTZKW 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
G Skill Intl F4-3866C18-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 27
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3866C18-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 18
  • 读取速度，GB/s
    13.9 left arrow 20.9
  • 写入速度，GB/s
    8.4 left arrow 16.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3609

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

G Skill Intl F4-3866C18-8GTZKW 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Samsung M378A5143DB0-CPB 4GB
Samsung M378A5143DB0-CPB 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avant Technology J642GU42J2320NQ 16GB
Avant Technology J642GU42J2320NQ 16GB
内存RAM
Samsung M391B1G73QH0-YK0 8GB
Samsung M391B1G73QH0-YK0 8GB
Samsung M391B1G73BH0-YK0 8GB
Samsung M391B1G73BH0-YK0 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
内存RAM