Crucial Technology CT51264BA1339.C16F 4GB vs G Skill Intl F4-4000C18-16GTRS 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-4000C18-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRS 16GB

报告一个错误

更快的读取速度，GB/s

20.8 13.9

测试中的平均数值
更快的写入速度，GB/s

16.9 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.9 20.8
写入速度，GB/s

8.4 16.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 3901

RAM Latency Calculator

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RAM 2

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Kingston 9965525-140.A00LF 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Transcend Information JM3200HLB-8G 8GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Kingston KHX2400C12D4/4GX 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB