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Crucial Technology CT51264BA1339.C16F 4GB
Golden Empire CL18-20-20 D4-3600 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Golden Empire CL18-20-20 D4-3600 8GB 需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Golden Empire CL18-20-20 D4-3600 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 17.7
  • 写入速度，GB/s
    8.4 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3772

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

Golden Empire CL18-20-20 D4-3600 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Golden Empire CL18-20-20 D4-3600 8GB
Golden Empire CL18-20-20 D4-3600 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMSX32GX4M2A2933C19 16GB
Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMD64GX4M8A2400C14 8GB
Corsair CMD64GX4M8A2400C14 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston RB26D4U9D8MEH-16 16GB
Kingston RB26D4U9D8MEH-16 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMK16GX4M2C3200C16 8GB
Corsair CMK16GX4M2C3200C16 8GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMU64GX4M4D3000C16 16GB
Corsair CMU64GX4M4D3000C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-3000C16-8GISB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-3000C16-16GISB 16GB
G Skill Intl F4-3000C16-16GISB 16GB
内存RAM