Crucial Technology CT51264BA1339.C16F 4GB vs Kingston 9905678-105.A00G 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Kingston 9905678-105.A00G 8GB

Kingston 9905678-105.A00G 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Kingston 9905678-105.A00G 8GB

需要考虑的原因
Kingston 9905678-105.A00G 8GB

报告一个错误

更快的读取速度，GB/s

17.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.3 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905678-105.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.9 17.4
写入速度，GB/s

8.4 12.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-3200C16-32GTZR 32GB

G Skill Intl F4-3200C16-32GTZR 32GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905678-105.A00G 8GB

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Samsung M393B1K70DH0-CH9 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 99U5700-027.A00G 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3200C16-4GTZB 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G