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Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Micron Technology 16ATF2G64HZ-2G3E2 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB
报告一个错误
更快的读取速度,GB/s
16.5
13.9
测试中的平均数值
更快的写入速度,GB/s
13.6
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
27
读取速度,GB/s
13.9
16.5
写入速度,GB/s
8.4
13.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2892
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M393A2K43BB1-CRC 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Mushkin 991988 (996988) 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Kingston 9905471-002.A00LF 2GB
Transcend Information TS2GSH64V4B 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3200C16-8GRS 8GB
Samsung M3 93T5750CZA-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-2800C16-4GVR 4GB
Kingston ACR256X64D3S1333C9 2GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Samsung M393B1G70QH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Kingston 9905403-500.A01LF 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMD64GX4M8B3200C16 8GB
SpecTek Incorporated PSD34G13332 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Samsung M471B5273CH0-CH9 4GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
报告一个错误
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Bug description
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