Crucial Technology CT51264BA1339.C16F 4GB vs Samsung M378A5143DB0-CPB 4GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Samsung M378A5143DB0-CPB 4GB

需要考虑的原因
Samsung M378A5143DB0-CPB 4GB

报告一个错误

更快的读取速度，GB/s

14.4 13.9

测试中的平均数值
更快的写入速度，GB/s

10.6 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M378A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

13.9 14.4
写入速度，GB/s

8.4 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT32GX4M2C3600C18 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Kingston 9905458-017.A01LF 4GB

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Samsung M471A1K43DB1-CWE 8GB

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Crucial Technology CT8G4SFS8266.C8FE 8GB

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SK Hynix HMA84GL7AFR4N-UH 32GB

SK Hynix HMA84GL7AFR4N-UH 32GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2800C15-8GRBB 8GB

G Skill Intl F4-2800C15-8GRBB 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Corsair CMK64GX4M4X4000C18 16GB

Corsair CMK64GX4M4X4000C18 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CMR16GX4M2C3466C16 8GB

Corsair CMR16GX4M2C3466C16 8GB