Crucial Technology CT51264BA1339.C16F 4GB vs Samsung M471A2K43CB1-CTD 16GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.5 13.9

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M471A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.9 15.5
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Crucial Technology BLS4G4D240FSE.8FBD2 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston KHX3600C18D4/32GX 32GB

Kingston KHX3600C18D4/32GX 32GB

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Kingston HX318C10FK/4 4GB

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Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

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G Skill Intl F4-3200C16-32GTZR 32GB