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Crucial Technology CT51264BA1339.C16F 4GB
Samsung T471A1K43CB1-CRC 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Samsung T471A1K43CB1-CRC 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Samsung T471A1K43CB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
更快的读取速度,GB/s
13.9
13.8
测试中的平均数值
更快的写入速度,GB/s
8.4
6.5
测试中的平均数值
需要考虑的原因
Samsung T471A1K43CB1-CRC 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Samsung T471A1K43CB1-CRC 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
13.9
13.8
写入速度,GB/s
8.4
6.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
1983
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Samsung T471A1K43CB1-CRC 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3200C15-16GVK 16GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2400C17-4GFT 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KHX3200C16D4/16GX 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Golden Empire CL16-16-16 D4-2800 8GB
A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Samsung M471A5143SB1-CRC 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Samsung M395T5160QZ4-CE66 2GB
Kingston KHX2400C15D4/8G 8GB
报告一个错误
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Bug description
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