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Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information JM2400HLB-8G 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs Transcend Information JM2400HLB-8G 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
Transcend Information JM2400HLB-8G 8GB

Transcend Information JM2400HLB-8G 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Transcend Information JM2400HLB-8G 8GB 需要考虑的原因
Transcend Information JM2400HLB-8G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information JM2400HLB-8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.9 left arrow 16.7
  • 写入速度，GB/s
    8.4 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 3244

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

Transcend Information JM2400HLB-8G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
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内存RAM
Corsair CML8GX3M2A1866C9 4GB
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Kingston KHYXPX-MID 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
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SK Hynix HMT151R7TFR4C-H9 4GB
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Corsair CMW32GX4M2C3000C15 16GB
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Samsung M378A1K43EB2-CWE 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology D12.2324WT.001 8GB
Apacer Technology D12.2324WT.001 8GB
内存RAM
AMD R538G1601U2S 8GB
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G Skill Intl F4-2133C15-8GIS 8GB
G Skill Intl F4-2133C15-8GIS 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM