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Crucial Technology CT51264BA1339.C16F 4GB
V-GEN D4H8GL32A8TS 8GB

Crucial Technology CT51264BA1339.C16F 4GB vs V-GEN D4H8GL32A8TS 8GB

总分
star star star star star
Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分
star star star star star
V-GEN D4H8GL32A8TS 8GB

V-GEN D4H8GL32A8TS 8GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 40
    左右 33% 更低的延时
V-GEN D4H8GL32A8TS 8GB 需要考虑的原因
V-GEN D4H8GL32A8TS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
V-GEN D4H8GL32A8TS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 40
  • 读取速度，GB/s
    13.9 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2251 left arrow 2462

Crucial Technology CT51264BA1339.C16F 4GB RAM的比较

Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB

V-GEN D4H8GL32A8TS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT51264BA1339.D16F 4GB
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内存RAM
Samsung M471B5173DB0-YK0 4GB
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Samsung M378B5273CH0-CH9 4GB
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内存RAM
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Team Group Inc. Vulcan-1600 4GB
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Corsair CMD32GX4M4C3000C15 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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内存RAM
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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G Skill Intl F4-3200C15-16GTZ 16GB
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A-DATA Technology DQKD1A08 1GB
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内存RAM