Crucial Technology CT51264BA160B.C16F 4GB vs Crucial Technology BL8G30C15U4WL.M8FE1 8GB

总分

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

总分

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

差异规格评论

差异

Crucial Technology CT51264BA160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB

报告一个错误

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4WL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

16.8 14.3

测试中的平均数值
更快的写入速度，GB/s

12.4 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.3 16.8
写入速度，GB/s

9.4 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2142 3143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Avant Technology J642GU42J9266N2 16GB

Avant Technology J642GU42J9266N2 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston HP24D4U7S8MBP-4 4GB

Kingston HP24D4U7S8MBP-4 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CM4X8GF2400C14K4 8GB

Corsair CM4X8GF2400C14K4 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB

Samsung M391B1G73QH0-YK0 8GB

Samsung M391B1G73QH0-YK0 8GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB