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Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905471-030.A00LF 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Kingston 9905471-030.A00LF 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Kingston 9905471-030.A00LF 8GB

Kingston 9905471-030.A00LF 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 36% 更低的延时
Kingston 9905471-030.A00LF 8GB 需要考虑的原因
Kingston 9905471-030.A00LF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905471-030.A00LF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    25 left arrow 39
  • 读取速度，GB/s
    12.1 left arrow 14.3
  • 写入速度，GB/s
    8.6 left arrow 9.5
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2641

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB

Kingston 9905471-030.A00LF 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB
Kingston XRGM6C-MIE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905471-030.A00LF 8GB
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内存RAM
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston ACR26D4S9S8ME-8 8GB
内存RAM