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Crucial Technology CT51264BF1339J.M8F 4GB
A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT51264BF1339J.M8F 4GB vs A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
Crucial Technology CT51264BF1339J.M8F 4GB

Crucial Technology CT51264BF1339J.M8F 4GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

差异 规格 评论

差异

Crucial Technology CT51264BF1339J.M8F 4GB 需要考虑的原因
Crucial Technology CT51264BF1339J.M8F 4GB
报告一个错误
A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 29
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CT51264BF1339J.M8F 4GB
A-DATA Technology AD73I1B1672EG 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 26
  • 读取速度，GB/s
    10.4 left arrow 12.2
  • 写入速度，GB/s
    6.9 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1816 left arrow 1677

Crucial Technology CT51264BF1339J.M8F 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology CT51264BF1339J.M8F 4GB
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A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
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Samsung M471B5273DH0-CH9 4GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Samsung M395T2863QZ4-CF76 1GB
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内存RAM
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G Skill Intl F4-3200C16-16GTZR 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A1G43EB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
内存RAM