Crucial Technology CT51264BF160BJ.M8F 4GB vs Mushkin 99[2/7/4]205F 8GB

总分

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

总分

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

差异规格评论

差异

Crucial Technology CT51264BF160BJ.M8F 4GB

需要考虑的原因
Crucial Technology CT51264BF160BJ.M8F 4GB

报告一个错误

Mushkin 99[2/7/4]205F 8GB

需要考虑的原因
Mushkin 99[2/7/4]205F 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 -12% 更低的延时
更快的读取速度，GB/s

13.5 11.5

测试中的平均数值
更快的写入速度，GB/s

11.3 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160BJ.M8F 4GB

Mushkin 99[2/7/4]205F 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 26
读取速度，GB/s

11.5 13.5
写入速度，GB/s

7.3 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1892 2891

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Corsair CMK32GX4M2A2666C16 16GB

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A-DATA Technology DDR3 1866 2OZ 4GB

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Samsung 1600 CL10 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Crucial Technology BL8G36C16U4B.M8FE1 8GB

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