Crucial Technology CT51264BF160BJ.M8F 4GB vs OCMEMORY OCM3200CL16D-16GBN 8GB

总分

Crucial Technology CT51264BF160BJ.M8F 4GB

Crucial Technology CT51264BF160BJ.M8F 4GB

总分

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

差异规格评论

差异

Crucial Technology CT51264BF160BJ.M8F 4GB

需要考虑的原因
Crucial Technology CT51264BF160BJ.M8F 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 55

左右 47% 更低的延时

OCMEMORY OCM3200CL16D-16GBN 8GB

需要考虑的原因
OCMEMORY OCM3200CL16D-16GBN 8GB

报告一个错误

更快的读取速度，GB/s

19 11.5

测试中的平均数值
更快的写入速度，GB/s

9.0 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160BJ.M8F 4GB

OCMEMORY OCM3200CL16D-16GBN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 55
读取速度，GB/s

11.5 19.0
写入速度，GB/s

7.3 9.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1892 2239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BF160BJ.M8F 4GB

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OCMEMORY OCM3200CL16D-16GBN 8GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

Micron Technology 18HTF12872AY-800F1 1GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

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Kingston KHX2933C15D4/8GX 8GB

Kingston KHX2933C15D4/8GX 8GB