Crucial Technology CT8G4DFS824A.C8FE 8GB vs Patriot Memory (PDP Systems) 2133 C14 Series 8GB

总分

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

总分

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

差异规格评论

差异

Crucial Technology CT8G4DFS824A.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时
更快的读取速度，GB/s

15.1 13.7

测试中的平均数值
更快的写入速度，GB/s

9.7 9.4

测试中的平均数值

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2133 C14 Series 8GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology CT8G4DFS824A.C8FE 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

15.1 13.7
写入速度，GB/s

9.7 9.4
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2589 2397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Samsung M471B5273DH0-CH9 4GB

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Chun Well Technology Holding Limited D4U0832160B 8GB

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Micron Technology 36ASF2G72PZ-2G3A3 16GB

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Samsung M391B5673EH1-CH9 2GB

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Kingmax Semiconductor GSLG42F-18---------- 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Crucial Technology BL8G32C16U4WL.8FE 8GB

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