Crucial Technology RM51264BA1339.16FR 4GB vs Corsair CMN32GX4M2Z3600C18 16GB

总分

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

总分

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

差异规格评论

差异

Crucial Technology RM51264BA1339.16FR 4GB

需要考虑的原因
Crucial Technology RM51264BA1339.16FR 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 42% 更低的延时

Corsair CMN32GX4M2Z3600C18 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3600C18 16GB

报告一个错误

更快的读取速度，GB/s

19.7 12.3

测试中的平均数值
更快的写入速度，GB/s

15.5 7.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology RM51264BA1339.16FR 4GB

Corsair CMN32GX4M2Z3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 45
读取速度，GB/s

12.3 19.7
写入速度，GB/s

7.4 15.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2078 3240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology RM51264BA1339.16FR 4GB

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SK Hynix HMT451U7BFR8C-RD 4GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-4600C18-8GTRS 8GB

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Golden Empire CL18-22-22 D4-3600 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Kingston KHX2133C15S4/8G 8GB

Kingston KHX2133C15S4/8G 8GB