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Elpida EBE10UE8AFSA-8G-F 1GB
Samsung M393A2K40BB0-CPB 16GB

Elpida EBE10UE8AFSA-8G-F 1GB vs Samsung M393A2K40BB0-CPB 16GB

总分
star star star star star
Elpida EBE10UE8AFSA-8G-F 1GB

Elpida EBE10UE8AFSA-8G-F 1GB

总分
star star star star star
Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

差异 规格 评论

差异

Elpida EBE10UE8AFSA-8G-F 1GB 需要考虑的原因
Elpida EBE10UE8AFSA-8G-F 1GB
报告一个错误
Samsung M393A2K40BB0-CPB 16GB 需要考虑的原因
Samsung M393A2K40BB0-CPB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 77
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    5.3 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.2 left arrow 1,546.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Elpida EBE10UE8AFSA-8G-F 1GB
Samsung M393A2K40BB0-CPB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 54
  • 读取速度，GB/s
    2,631.4 left arrow 5.3
  • 写入速度，GB/s
    1,546.2 left arrow 4.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    406 left arrow 1277

Elpida EBE10UE8AFSA-8G-F 1GB RAM的比较

Corsair CM2X1024-6400 1GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Samsung M393A2K40BB0-CPB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Samsung M393A2K40BB0-CPB 16GB
Samsung M393A2K40BB0-CPB 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C15-4GTZ 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2400C15-16GFT 16GB
G Skill Intl F4-2400C15-16GFT 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Essencore Limited KD44GU481-26N1600 4GB
Essencore Limited KD44GU481-26N1600 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMD16GX4M2A2666C15 8GB
Corsair CMD16GX4M2A2666C15 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Essencore Limited KD4AGU880-34A170X 16GB
Essencore Limited KD4AGU880-34A170X 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 9905744-027.A00G 16GB
Kingston 9905744-027.A00G 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM