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Elpida EBE10UE8AFSA-8G-F 1GB
Transcend Information TS2GSH64V4B 16GB

Elpida EBE10UE8AFSA-8G-F 1GB vs Transcend Information TS2GSH64V4B 16GB

总分
star star star star star
Elpida EBE10UE8AFSA-8G-F 1GB

Elpida EBE10UE8AFSA-8G-F 1GB

总分
star star star star star
Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

差异 规格 评论

差异

Elpida EBE10UE8AFSA-8G-F 1GB 需要考虑的原因
Elpida EBE10UE8AFSA-8G-F 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.3
    测试中的平均数值
Transcend Information TS2GSH64V4B 16GB 需要考虑的原因
Transcend Information TS2GSH64V4B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 77
    左右 -208% 更低的延时
  • 更快的写入速度，GB/s
    11.4 left arrow 1,546.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Elpida EBE10UE8AFSA-8G-F 1GB
Transcend Information TS2GSH64V4B 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 25
  • 读取速度，GB/s
    2,631.4 left arrow 15.3
  • 写入速度，GB/s
    1,546.2 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    406 left arrow 2681

Elpida EBE10UE8AFSA-8G-F 1GB RAM的比较

Corsair CM2X1024-6400 1GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Transcend Information TS2GSH64V4B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBE10UE8AFSA-8G-F 1GB
Elpida EBE10UE8AFSA-8G-F 1GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston HP32D4U8S8ME-8X 8GB
Kingston HP32D4U8S8ME-8X 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
内存RAM