Elpida EBE21UE8ACUA-8G-E 2GB vs Corsair CMK4GX4M1A2400C14 4GB

总分

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

总分

Corsair CMK4GX4M1A2400C14 4GB

Corsair CMK4GX4M1A2400C14 4GB

差异规格评论

差异

Elpida EBE21UE8ACUA-8G-E 2GB

需要考虑的原因
Elpida EBE21UE8ACUA-8G-E 2GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,001.3 13.2

测试中的平均数值

Corsair CMK4GX4M1A2400C14 4GB

需要考虑的原因
Corsair CMK4GX4M1A2400C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 58

左右 -93% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Elpida EBE21UE8ACUA-8G-E 2GB

Corsair CMK4GX4M1A2400C14 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 30
读取速度，GB/s

4,796.5 18.2
写入速度，GB/s

2,001.3 13.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

768 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 18ASF1G72PDZ-2G6B1 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Panram International Corporation PUD42400C154G4NJK 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Samsung M471A1A43DB0-CPB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Kingston 99U5471-025.A00LF 4GB

Kingston 99U5471-025.A00LF 4GB

Kingston 9965669-005.A01G 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666