Elpida EBJ10UE8BAFA-AE-E 1GB vs Crucial Technology CT8G4DFS8213.C8FAD1 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FAD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的读取速度，GB/s

13.7 6.1

测试中的平均数值
更快的写入速度，GB/s

8.0 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

6.1 13.7
写入速度，GB/s

4.2 8.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 2290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 18ASF2G72AZ-2G1A1 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Crucial Technology CT8G4DFS8213.C8FAD1 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BL16G32C16S4B.8FB 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB