Elpida EBJ10UE8BAFA-AE-E 1GB vs Essencore Limited IM48GU48N28-GGGHM 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

低于PassMark测试中的延时，ns

65 68

左右 4% 更低的延时

Essencore Limited IM48GU48N28-GGGHM 8GB

需要考虑的原因
Essencore Limited IM48GU48N28-GGGHM 8GB

报告一个错误

更快的读取速度，GB/s

16.4 6.1

测试中的平均数值
更快的写入速度，GB/s

8.6 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Essencore Limited IM48GU48N28-GGGHM 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 68
读取速度，GB/s

6.1 16.4
写入速度，GB/s

4.2 8.6
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 1924

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Samsung M471A1K43CB1-CTD 8GB

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Samsung M378A1K43EB2-CWE 8GB

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A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-2666C18-32GTZN 32GB

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G Skill Intl F3-2400C11-8GSR 8GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB