Elpida EBJ10UE8BAFA-AE-E 1GB vs Micron Technology 18ASF2G72AZ-2G3B1 16GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Micron Technology 18ASF2G72AZ-2G3B1 16GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

Micron Technology 18ASF2G72AZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72AZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 -141% 更低的延时
更快的读取速度，GB/s

14.1 6.1

测试中的平均数值
更快的写入速度，GB/s

8.5 4.2

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 27
读取速度，GB/s

6.1 14.1
写入速度，GB/s

4.2 8.5
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

985 2436

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK64GX4M2Z4000C18 32GB

Corsair CMK64GX4M2Z4000C18 32GB

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Apacer Technology 78.01G86.9H50C 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M3 93T5750CZA-CE6 2GB

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Mushkin 99[2/7/4]189F 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB