Elpida EBJ10UE8BAFA-AE-E 1GB vs SK Hynix HMA425S6BJR6N-UH 2GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

低于PassMark测试中的延时，ns

65 101

左右 36% 更低的延时

SK Hynix HMA425S6BJR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6BJR6N-UH 2GB

报告一个错误

更快的读取速度，GB/s

14.2 6.1

测试中的平均数值
更快的写入速度，GB/s

7.0 4.2

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

SK Hynix HMA425S6BJR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 101
读取速度，GB/s

6.1 14.2
写入速度，GB/s

4.2 7.0
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

985 1313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hexon Technology Pte Ltd HEXON 1GB

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Panram International Corporation M424051 4GB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kllisre HMA81GU6AFR8N-VK 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT4G4SFS824A.C8FE 4GB

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Kingston KVR533D2N4 512MB

Corsair CMK16GX4M2B3600C18 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 9965604-033.D00G 16GB

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB