Elpida EBJ17RG4EFWA-DJ-F 16GB vs Avant Technology W642GU42J5213N 16GB

总分

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异规格评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB

需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB

报告一个错误

Avant Technology W642GU42J5213N 16GB

需要考虑的原因
Avant Technology W642GU42J5213N 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 54

左右 -135% 更低的延时
更快的读取速度，GB/s

18.3 9.4

测试中的平均数值
更快的写入速度，GB/s

13.7 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ17RG4EFWA-DJ-F 16GB

Avant Technology W642GU42J5213N 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 23
读取速度，GB/s

9.4 18.3
写入速度，GB/s

6.7 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1929 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905625-029.A00G 8GB

Kingston 9905625-029.A00G 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA82GS6AFRFR-UH 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9965589-035.D00G 16GB

Kingston 9965589-035.D00G 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB