Elpida EBJ17RG4EFWA-DJ-F 16GB vs G Skill Intl F4-2800C15-4GVR 4GB

总分

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

总分

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

差异规格评论

差异

Elpida EBJ17RG4EFWA-DJ-F 16GB

需要考虑的原因
Elpida EBJ17RG4EFWA-DJ-F 16GB

报告一个错误

G Skill Intl F4-2800C15-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2800C15-4GVR 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 54

左右 -157% 更低的延时
更快的读取速度，GB/s

18.6 9.4

测试中的平均数值
更快的写入速度，GB/s

14.1 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-2800C15-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 21
读取速度，GB/s

9.4 18.6
写入速度，GB/s

6.7 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1929 3062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS8213.C8FBR2 4GB

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Samsung M3 78T5663EH3-CF7 2GB

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Kingston 9905678-139.A00G 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-2800C15-4GVR 4GB

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Kingston 99U5403-036.A00G 4GB

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Crucial Technology CT51264BF160BJ.C8F 4GB

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G Skill Intl F4-3333C16-8GVR 8GB

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Kingston 9965525-155.A00LF 8GB

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Corsair CMSX32GX4M2A2400C16 16GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-2133C15-8GFT 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

V-Color Technology Inc. TA48G30S815G 8GB

V-Color Technology Inc. TA48G30S815G 8GB