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Elpida EBJ40EG8BFWB-JS-F 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

总分
star star star star star
Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

差异 规格 评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB 需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 14200
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40EG8BFWB-JS-F 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    13.9 left arrow 18.5
  • 写入速度，GB/s
    9.6 left arrow 15.8
  • 内存带宽，mbps
    14200 left arrow 21300
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2558 left arrow 3431

Elpida EBJ40EG8BFWB-JS-F 4GB RAM的比较

Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-4000C19-4GVK 4GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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Samsung M391A1G43EB1-CPB 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
Kingston KVR16N11/8-SP 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
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Kingston 9905403-061.A00LF 2GB
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内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Corsair CMD32GX4M2B2800C14 16GB
内存RAM
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AMD R538G1601U2S 8GB
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Samsung M471B1G73EB0-YK0 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
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Kingston KHX3000C16D4/32GX 32GB
内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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Kingston KTP9W1-MIE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK32GX4M4A2133C13 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM