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Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

总分
star star star star star
Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

差异 规格 评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB 需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 7.0
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 14200
    左右 1.35 更高的带宽

规格

完整的技术规格清单
Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 36
  • 读取速度，GB/s
    13.9 left arrow 9.3
  • 写入速度，GB/s
    9.6 left arrow 7.0
  • 内存带宽，mbps
    14200 left arrow 19200
Other
  • 描述
    PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2558 left arrow 1891

Elpida EBJ40EG8BFWB-JS-F 4GB RAM的比较

Corsair CML4GX3M1A1600C9 4GB
Corsair CML4GX3M2A1600C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较

Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK16GX4M2Z2933C16 8GB
Corsair CMK16GX4M2Z2933C16 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Golden Empire CL5-5-5DDR2 1GB
Golden Empire CL5-5-5DDR2 1GB
Panram International Corporation PUD42133C154G2VS 4GB
Panram International Corporation PUD42133C154G2VS 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
PNY Electronics 4GBH2X02E99927-16- 4GB
PNY Electronics 4GBH2X02E99927-16- 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM