Elpida EBJ40EG8BFWB-JS-F 4GB vs InnoDisk Corporation 16GB

总分

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

总分

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

差异规格评论

差异

Elpida EBJ40EG8BFWB-JS-F 4GB

需要考虑的原因
Elpida EBJ40EG8BFWB-JS-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时
更快的读取速度，GB/s

13.9 7.7

测试中的平均数值
更快的写入速度，GB/s

9.6 8.2

测试中的平均数值

InnoDisk Corporation 16GB

需要考虑的原因
InnoDisk Corporation 16GB

报告一个错误

更高的内存带宽，mbps

17000 14200

左右 1.2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40EG8BFWB-JS-F 4GB

InnoDisk Corporation 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

13.9 7.7
写入速度，GB/s

9.6 8.2
内存带宽，mbps

14200 17000

Other

描述

PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2558 2163

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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InnoDisk Corporation 16GB

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A-DATA Technology VDQVE1B16 2GB

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Panram International Corporation PUD42133C154G2VS 4GB

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Samsung M378A5244BB0-CRC 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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AMD AE34G1601U1 4GB

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Patriot Memory (PDP Systems) 2133 C14 Series 8GB

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Golden Empire CL16-16-16 D4-2400 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Corsair CM4S16GL3200K18K2 16GB

Corsair CM4S16GL3200K18K2 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Apacer Technology 78.C1GS7.AUW0B 8GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB