Elpida EBJ40UG8EFU5-GNL-F 4GB vs G Skill Intl F4-4800C18-8GTRG 8GB

总分

Elpida EBJ40UG8EFU5-GNL-F 4GB

Elpida EBJ40UG8EFU5-GNL-F 4GB

总分

G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

差异规格评论

差异

Elpida EBJ40UG8EFU5-GNL-F 4GB

需要考虑的原因
Elpida EBJ40UG8EFU5-GNL-F 4GB

报告一个错误

G Skill Intl F4-4800C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4800C18-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

16.7 14

测试中的平均数值
更快的写入速度，GB/s

15.4 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ40UG8EFU5-GNL-F 4GB

G Skill Intl F4-4800C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

14.0 16.7
写入速度，GB/s

8.2 15.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2188 3552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston 9905663-012.A00G 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

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Gloway International (HK) STK4U2400D17161C 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT25664BA160B.C8FK 2GB

Crucial Technology CT25664BA160B.C8FK 2GB