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Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-2133C15-16GVR 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB vs G Skill Intl F4-2133C15-16GVR 16GB

总分
star star star star star
Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分
star star star star star
G Skill Intl F4-2133C15-16GVR 16GB

G Skill Intl F4-2133C15-16GVR 16GB

差异 规格 评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB 需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 33
    左右 27% 更低的延时
G Skill Intl F4-2133C15-16GVR 16GB 需要考虑的原因
G Skill Intl F4-2133C15-16GVR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-2133C15-16GVR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 33
  • 读取速度，GB/s
    14.4 left arrow 16.2
  • 写入速度，GB/s
    9.4 left arrow 11.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2267 left arrow 3048

Elpida EBJ41UF8BDU5-GN-F 4GB RAM的比较

SK Hynix HMT451S6AFR8A-PB 4GB
Hewlett-Packard 7EH64AA# 8GB

G Skill Intl F4-2133C15-16GVR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-2133C15-16GVR 16GB
G Skill Intl F4-2133C15-16GVR 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KF2666C15S4/16G 16GB
Kingston KF2666C15S4/16G 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9965669-005.A01G 16GB
Kingston 9965669-005.A01G 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMR32GX4M2F3600C18 16GB
Corsair CMR32GX4M2F3600C18 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM