Elpida EBJ41UF8BDU5-GN-F 4GB vs G Skill Intl F4-3600C17-16GTZ 16GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时

G Skill Intl F4-3600C17-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3600C17-16GTZ 16GB

报告一个错误

更快的读取速度，GB/s

18 14.4

测试中的平均数值
更快的写入速度，GB/s

16.5 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

G Skill Intl F4-3600C17-16GTZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

14.4 18.0
写入速度，GB/s

9.4 16.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2267 3741

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C18-8GTRG 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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G Skill Intl F4-3600C17-16GTZ 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Corsair CMD16GX4M4B3300C16 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB