Elpida EBJ41UF8BDU5-GN-F 4GB vs Samsung M471A2G43BB2-CWE 16GB

总分

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

总分

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

差异规格评论

差异

Elpida EBJ41UF8BDU5-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDU5-GN-F 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 60

左右 60% 更低的延时

Samsung M471A2G43BB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB

报告一个错误

更快的读取速度，GB/s

14.9 14.4

测试中的平均数值
更快的写入速度，GB/s

12.0 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDU5-GN-F 4GB

Samsung M471A2G43BB2-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 60
读取速度，GB/s

14.4 14.9
写入速度，GB/s

9.4 12.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2267 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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V-GEN D4M8GL26A8TS6 8GB

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Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB