Elpida EBJ41UF8BDW0-GN-F 4GB vs SK Hynix HMA81GS6AFR8N-VK 8GB

总分

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

总分

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

差异规格评论

差异

Elpida EBJ41UF8BDW0-GN-F 4GB

需要考虑的原因
Elpida EBJ41UF8BDW0-GN-F 4GB

报告一个错误

SK Hynix HMA81GS6AFR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6AFR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 -6% 更低的延时
更快的读取速度，GB/s

15.3 14.4

测试中的平均数值
更快的写入速度，GB/s

12.4 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ41UF8BDW0-GN-F 4GB

SK Hynix HMA81GS6AFR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 36
读取速度，GB/s

14.4 15.3
写入速度，GB/s

9.5 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2361 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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UMAX Technology D4-2666-8GB-1024X8-L 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3000C16-8GISB 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Kingston HP16D3LS1KBGH/4G 4GB

Kingston HP16D3LS1KBGH/4G 4GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB